MBRB860 [BL Galaxy Electrical]
SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
| 型号： | MBRB860 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
MBRB830---MBRB8100
BL
VOLTAGE RANGE: 30 - 100 V
SCHOTTKY BARRIER RECTIFIER
CURRENT: 8.0 A
FEATURES
2
D PAK
High surge capacity.
For use in low voltage, high frequency inverters, free
111wheeling, and polarity protection applications.
0.421(10.69)
0.380(9.65)
0.190(4.83)
0.172(4.37)
0.055(1.40)
0.045(1.14)
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
0.055(1.40)
0.045(1.14)
3
0.364(9.25)
0.325(8.25)
0.625(15.88)
0.575(14.60)
1
2
MECHANICAL DATA
Case:JEDEC D2PAK,molded plastic body
0.045(1.14)
0.020(0.51)
0.35(8.89)ref.
0.110(2.79)
0.090(2.29)
0.220(5.58)
0.180(4.58)
0.025(0.64)
0.012(0.30)
Terminals:Leads, solderable per MIL-STD-750,
PIN1
0.115(2.92)
0.080(2.03)
1 1
Method 2026
Polarity: As marked
Position: Any
K-HEATSINK
PIN2
Weight: 0.087 ounces,2.2 gram
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Ratings at 25
MBRB MBRB MBRB MBRB MBRB MBRB MBRB MBRB
UNITS
830
835
840 845
850
860
880 8100
Maximum recurrent peak reverse voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
35
40
28
40
45
32
45
50
60
80
56
80
100
70
V
V
V
21
25
35
42
Maximum DC blocking voltage
30
35
50
60
100
Maximum average forw ard total device11111111
IF(AV)
IFSM
8.0
A
A
m rectified current @TC = 125°C
Peak forw ard surge current 8.3ms single half
150
b
sine-w ave superimposed on rated load
)
)
Maximum forw ard
voltage
(IF=8.0A,TC=125
0.57
0.70
-
(I
0.80
0.95
0.85
-
F=8.0A,TC=25
0.70
0.84
V
VF
IF=16A,TC=25
(Note 1)
(
)
Maximum reverse current
at rated DC blocking voltage
@TC=25
0.1
15
0.5
50
IR
m A
@TC=125
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
3.0
RθJC
TJ
K/W
- 55 ---- + 150
- 55 ---- + 150
TSTG
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
www.galaxycn.com
1.
Document Number 0267059
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
MBRB830---MBRB8100
FIG.1 -- PEAK FORWARD SURGE CURRENT
FIG.2 -- FORWARD DERATING CURVE
150
10
8
120
8.3ms Single Half Sine Wave
TJ=125
6
4
90
60
2
0
30
0
25
50
75
100
125
150
1
10
100
NUMBER OF CYCLES AT60HZ
CASE TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
10
20
MBRB880-MBRB8100
MBRB830-MBRB860
10
MBRB830-MBRB845
MBRB880-MBRB8100
1
MBRB850-MBRB860
1
MBRB880-MBRB8100
.1
P u ls e w id th = 3 0 0
1 % D u ty C y c le
s
MBRB830-MBRB860
TC=125℃
0.1
.3
TC=25℃
.01
.4
.5
.6
.7
.8
.9
1.0 1.1
1.2
1.3
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARDVOLTAGE, VOLTS
www.galaxycn.com
Document Number 0267059
2.
BLGALAXY ELECTRICAL
相关型号：
MBRB860-TP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 60V V(RRM), Silicon, PLASTIC, D2PAK-3
MCC
MBRB880-TP
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 80V V(RRM), Silicon, PLASTIC, D2PAK-3
MCC
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